I4N60 Datasheet, Mosfet, ROUM

I4N60 Features

• Mosfet
• Fast Switching
• ESD Improved Capability
• Low ON Resistance(Rdson≤2.5Ω)
• Low Gate Charge(Typical Data:14.5nC)
• Low Reverse Transfer Capacita

PDF File Details

Part number:

I4N60

Manufacturer:

ROUM

File Size:

1.27MB

Download:

📄 Datasheet

Description:

4a 600v n-channel enhancement mode power mosfet. These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switc

I4N60 Application

• Applications
• used in various power switching circuit for system miniaturization and higher efficiency.
• Power switch circuit of e

TAGS

I4N60

ROUM

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I454-VB I454-VB Datasheet N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0050 at VGS = 10 V 40 0.0065 at VGS = 4.5 V TO-251 .