Datasheet Details
- Part number
- I4N60
- Manufacturer
- ROUM
- File Size
- 1.27 MB
- Datasheet
- I4N60-ROUM.pdf
- Description
- 4A 600V N-channel Enhancement Mode Power MOSFET
I4N60 Description
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.
I4N60 Features
* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge(Typical Data:14.5nC)
* Low Reverse Transfer Capacitances(Typical:4pF)
* 100% Single Pulse Avalanche Energy Test
I4N60 Applications
* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of electron ballast and adaptor. TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
4N60
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