JCWT8CN2ES6 N-Channel Enhancement Mode Field Effect Transistor

Description

JCWT8CN2ES6 N-Channel Enhancement Mode Field Effect Transistor Marking and pin assignment Product Summary * VDS * ID * RDS(ON)( at VGS=4.
Trench Power LV MOSFET technology. High Power and current handing capability DFN2. 2-6L. Ordering Information (Example) PREFERED.

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Datasheet Specifications

Part number: JCWT8CN2ES6
Manufacturer: JIACANWEI
File Size: 1.29 MB
Datasheet: JCWT8CN2ES6-JIACANWEI.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* PWM application
* Load switch MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE JCWT8CN2ES6 DFN2
* 2-6 T8CN 3000 45000
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-source Voltage VDS Gate-source Vo

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JCWT8CN2ES6 N-Channel Enhancement Mode Field Effect Transistor JIACANWEI

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