IGT6D10 Datasheet, Transistor, GE

IGT6D10 Features

• Transistor
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on - 150 ns typical
• Polysilicon MOS gate - Voltage controlled turn onloff
• High current handling -1

PDF File Details

Part number:

IGT6D10

Manufacturer:

GE

File Size:

291.90kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IGT6D10 Application

• Applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power supplies and drive

TAGS

IGT6D10

GE

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