IGT6D10 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV.RDS(ON) = 0.27 n This IGT'II Transisto.

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Datasheet Specifications

Part number: IGT6D10
Manufacturer: GE
File Size: 291.90 KB
Datasheet: IGT6D10-GE.pdf
Description: Insulated Gate Bipolar Transistor

Features

* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10 amps @ 100°C N-CHANNEL c . ~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~
* -

IGT6D10 Distributors

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IGT6D10 Insulated Gate Bipolar Transistor GE

GE IGT6D10-like datasheet