Datasheet Details
- Part number
- IGT6D10
- Manufacturer
- GE
- File Size
- 291.90 KB
- Datasheet
- IGT6D10-GE.pdf
- Description
- Insulated Gate Bipolar Transistor
IGT6D10 Description
mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV.RDS(ON) = 0.27 n This IGT'II Transisto.
IGT6D10 Features
* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10 amps @ 100°C
N-CHANNEL
c
. ~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
~~~
* -
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