* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 150 ns typical
* Polysilicon MOS gate - Voltage controlled turn onloff
* High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~
* -
IGT6D10
GE
291.90 KB
Insulated gate bipolar transistor.
mTMlJ~~~
Insulated Gate Bipolar Transistor
Preliminary 26.4 4/85
IGT6D10,E10
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n
This IGT'II Transisto.
📁 Related Datasheet
IGT6D11 Insulated Gate Bipolar Transistor (GE)
IGT6D20 Insulated Gate Bipolar Transistor (GE)
IGT6D21 Insulated Gate Bipolar Transistor (GE)
IGT60R042D1 Power Transistor (Infineon)
IGT60R070D1 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 Power Transistor (Infineon)
IGT60R190D1S 600V enhancement-mode Power Transistor (Infineon)
IGT65R025D2 Power Transistor (Infineon)
IGT65R035D2 Power Transistor (Infineon)
IGT65R045D2 Power Transistor (Infineon)
