IGT4E11, IGT4D11 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV.ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bip.

📥 Download Datasheet

IGT4E11 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT4E11, IGT4D11. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT4E11, IGT4D11
Manufacturer: GE
File Size: 298.11 KB
Datasheet: IGT4D11-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT4E11, IGT4D11.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.
* . :~~g::~;~ .05511.391

IGT4E11 Distributors

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IGT4D11 Insulated Gate Bipolar Transistor GE

GE IGT4E11-like datasheet