IGT4E11, IGT4D11 Datasheet - GE

IGT4E11 Insulated Gate Bipolar Transistor

mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolartransistors. The device design and gate characteristics of the IGT'M Transi.

IGT4E11 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on - 100 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.

* . :~~g::~;~ .05511.391

IGT4D11-GE.pdf