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IGT4D10

Insulated Gate Bipolar Transistor

IGT4D10 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - .I :1~g::~~II~

IGT4D10 Datasheet (308.85 KB)

Preview of IGT4D10 PDF

Datasheet Details

Part number:

IGT4D10

Manufacturer:

GE

File Size:

308.85 KB

Description:

Insulated gate bipolar transistor.
mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate .

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IGT4D10 Insulated Gate Bipolar Transistor GE

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