* Low VCE(SAT) - 2.5V typ @ 10A
* Ultra-fast turn-on - 100 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 10 amps @ 100°C N-CHANNEL c o~ E DIMENSIONS ARE IN INCHES AND (MILLIMETERS) -.
* . :~~g::~;~ .05511.391
IGT4D11
GE
298.11 KB
Insulated gate bipolar transistor.
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Insulated Gate Bipolar Transistor
IGT4D11~E11
10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il
This IGT'M Transistor (Insulated Gate Bip.
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