mTMlJ~~~ Insulated Gate Bipolar Transistor Prelim.
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IGT6D10 - Insulated Gate Bipolar Transistor
mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transisto.