
IGT6D10 (GE)
Insulated Gate Bipolar Transistor
mTMlJ~~~
Insulated Gate Bipolar Transistor
Preliminary 26.4 4/85
IGT6D10,E10
10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n
This IGT'II Transisto
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mTMlJ~~~ Insulated Gate Bipolar Transistor Prelim.
Insulated Gate Bipolar Transistor
IGT6D10 Distributor