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IMBG120R008M2H

IMBG120R008M2H DataSheet

Infineon

IMBG120R008M2H - Silicon Carbide MOSFET

· 10 Hits • VDSS = 1200 V at Tvj = 25°C • IDDC = 144 A at TC = 100°C • RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
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