INCHANGE R60 Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor MMD70R600P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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Schottky Barrier Rectifier MBR60200PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier condu

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Ultrafast Recorvery Diode INCHANGE Semiconductor MUR60120PT FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive cen

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60H100CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capabilit

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6045WT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability

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Schottky Barrier Rectifier MBR6040PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduc

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6060PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier,

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60100CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100%

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Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·175℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Effi

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isc N-Channel MOSFET Transistor IPP65R600E6，IIPP65R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi

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isc N-Channel MOSFET Transistor R6020KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60L45CT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6045PT FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·17

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR60L45WT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6080PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier,

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isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor R6030KNZ FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6030ENZ FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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