INCHANGE R60 Datasheet | Specifications & PDF Download

Ultrafast Recorvery Diode INCHANGE Semiconductor MUR60120PT FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive cen

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Schottky Barrier Rectifier INCHANGE Semiconductor SBR60A200CT FEATURES ·With TO-220 packaging ·Soft, fast switching capability ·Low forward voltage

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalan

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Isc N-Channel MOSFET Transistor MMD70R600P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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isc N-Channel MOSFET Transistor R6007JNX FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor R6024ENZ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6020KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6009JNX FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor R6009JNJ FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor R6009JND3 FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor R6007ENX FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor R6076ENZ1 FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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isc N-Channel MOSFET Transistor R6047MNZ1 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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