.
INCHANGE
12
MMD70R600P - N-Channel MOSFET
Isc N-Channel MOSFET Transistor MMD70R600P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.
INCHANGE
8
MBR60100PT - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·175℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Effi.
INCHANGE
8
IPD60R600P7S - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalan.
INCHANGE
7
R6024ENZ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6024ENZ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.
Inchange Semiconductor
6
MBR6060PT - Schottky Barrier Rectifier
Schottky Barrier Rectifier INCHANGE Semiconductor MBR6060PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier,.
INCHANGE
6
SBR60A300CT - Schottky Barrier Rectifier
Schottky Barrier Rectifier INCHANGE Semiconductor SBR60A300CT FEATURES ·With TO-220 packaging ·Soft, fast switching capability ·Low forward voltage .
INCHANGE
6
R6024KNZ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6024KNZ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.
INCHANGE
6
R6009KNX - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6009KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.
INCHANGE
6
R6020ENJ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6020ENJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.
INCHANGE
6
R6020ENZ1 - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6020ENZ1 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.
INCHANGE
6
R6009ENX - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6009ENX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.
INCHANGE
6
R6035ENZ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6035ENZ FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R.
INCHANGE
5
R6024ENJ - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
INCHANGE
5
R6018JNX - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
INCHANGE
5
IPD60R600C6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.
INCHANGE
5
IPD60R600E6 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.
INCHANGE
5
R6004JND3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6004JND3 FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.
INCHANGE
5
R6011ENJ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6011ENJ FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.
INCHANGE
5
R6020KNX - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6020KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.
INCHANGE
5
R6047ENZ1 - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6047ENZ1 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-.