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TTA1943 - PNP Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor TTA1943 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Compl.TTA0002 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot.TTA0001 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot.TTA1452 - PNP Transistor
isc Silicon PNP Power Transistor TTA1452 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High .STTA6006TV1 - ULTRAFAST HIGH VOLTAGE DIODE
STTA6006TV1 ULTRAFAST HIGH VOLTAGE DIODE FEATURES ·Ultra-fast and soft recovery ·High frequency operations ·Very low overall power losses ·Minimum Lot.STTA1206D - Ultrafast Rectifier
Ultra fast Rectifier FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring .STTA512F - Ultra fast Rectifier
Ultra fast Rectifier FEATURES ·High reverse voltage capability ·Low switching loss ·High surge current capability ·Minimum Lot-to-Lot variations for .TTA1452B - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(.STTA9012TV2 - Ultrafast High Voltage Diode
STTA9012TV2 Ultrafast High Voltage Diode FEATURES ·High surge current capability ·Wide current range ·High voltage ratings up to 1200V ·Minimum Lot-t.