.
Diodes Incorporated
GBU808 - 8.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBU8005 - GBU810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · Glass Passivated Die Construction · High Case Dielectric Strength of 1500VRMS · Lo.
Diodes Incorporated
MB35 - HIGH CURRENT SILICON BRIDGE RECTIFIER
MB15(W) / 25(W) / 35(W) HIGH CURRENT SILICON BRIDGE RECTIFIER Features · · · · · · NOT RECOMMENDED FOR NEW DESIGNS, USE GBPC15/W, GBPC25/W, OR GBPC35.
Diodes Incorporated
2A05 - 2.0A RECTIFIER
2A01 - 2A07 2.0A RECTIFIER Features · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 70A Peak P.
Diodes Incorporated
2N7002DW - DUAL N-CHANNEL MOSFET
Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET has been designed to minimi.
Diodes Incorporated
B260A - 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Green B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Ideally Sui.
Diodes Incorporated
PR3002 - 3.0A FAST RECOVERY RECTIFIER
PR3001 - PR3005 3.0A FAST RECOVERY RECTIFIER Features · · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low.
Diodes Incorporated
1N4148WS - SURFACE MOUNT FAST SWITCHING DIODE
Features Fast Switching Speed Small Surface Mount Package For General-Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant .
Diodes Incorporated
ZPU180 - SILICON POWER ZENER DIODE
ZPU100 - ZPU180 SILICON POWER ZENER DIODE Features · · · · Planar Die Construction 1.3W Power Dissipation Zener Voltages Available from 100V - 180V He.
Diodes Incorporated
AP1506 - 3A PWM BUCK DC/DC CONVERTER
AP1506 150KHz, 3A PWM BUCK DC/DC CONVERTER Description Pin Assignments The AP1506 series are monolithic IC designed for a stepdown DC/DC converter,.
Compensated Deuices Incorporated
CD4099 - ZENER DIODE CHIPS
• 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE .
Diodes Incorporated
AP431A - ADJUSTABLE PRECISION SHUNT REGULATOR
NOT RECOMMENDED FOR NEW DESIGN USE AS431 AP431/AP431A ADJUSTABLE PRECISION SHUNT REGULATOR Description The AP431 and AP431A are 3-terminal adjustab.
Diodes Incorporated
GBJ2008 - 20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ20005 - GBJ2010 20A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 150.
Diodes Incorporated
GBU606 - 6.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBU6005 - GBU610 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · Glass Passivated Die Construction · High Case Dielectric Strength of 1500 VRMS · .
Diodes Incorporated
1N5349B - 5W ZENER DIODE
1N5344B - 1N5388B 5W ZENER DIODE Features · · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Vo.
Diodes Incorporated
BC807 - PNP SURFACE MOUNT TRANSISTOR
Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction Complementary NPN Types Available (BC817) For switching and .
Compensated Deuices Incorporated
1N4148UR-1 - SWITCHING DIODE
• 1N4148UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG .
Diodes Incorporated
KBJ406G - 4.0A GLASS PASSIVATED BRIDGE RECTIFIER
KBJ4005G - KBJ410G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 15.
Diodes Incorporated
SR306 - HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
SR302 - SR306 HIGH CURRENT SCHOTTKY BARRIER RECTIFIER Features · · · · Low Forward Drop High Surge Current Capacity Guard Ring for Transient Protectio.
Diodes Incorporated
AP1534 - PWM CONTROL 2A STEP-DOWN CONVERTER
AP1534 PWM CONTROL 2A STEP-DOWN CONVERTER Description Pin Assignments AP1534 consists of step-down switching regulator with PWM control. These devi.
Diodes Incorporated
DMP3098LSD - MOSFET
NEW PRODUCT DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(on) max 65mΩ @ VGS = -10V 115mΩ @ VGS = -4.5V ID .
