2N7002-01 Datasheet, Fet, Diodes Incorporated

2N7002-01 Features

  • Fet
  • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J

PDF File Details

Part number:

2N7002-01

Manufacturer:

DIODES ↗ Incorporated

File Size:

63.29kb

Download:

📄 Datasheet

Description:

N-channel fet.

Datasheet Preview: 2N7002-01 📥 Download PDF (63.29kb)
Page 2 of 2N7002-01 Page 3 of 2N7002-01

TAGS

2N7002-01
N-channel
FET
Diodes Incorporated

📁 Related Datasheet

2N7002-G - N-Channel Enhancement-Mode Vertical DMOS FETs (Supertex)
Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of.

2N7002-G - MOSFET (Comchip)
MOSFET 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40.

2N7002-HF - MOSFET (Comchip)
MOSFET 2N7002-HF (N-Channel) RoHS Device Halogen Free Features -Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT.

2N7002 - N-channel FET (Fairchild Semiconductor)
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi.

2N7002 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-.

2N7002 - 300mA N-channel MOSFET (nexperia)
2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhan.

2N7002 - N-Channel MOSFET (MCC)
Features • Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Se.

2N7002 - N-channel MOSFET (Microchip)
2N7002 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.

2N7002 - N-Channel Enhancement Mode Power MOSFET (Rectron)
2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 230.

2N7002 - N-Channel MOSFET (ST Microelectronics)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts