2N7002E N-channel MOSFET

Diodes Incorporated

Description

2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3Ω @ VGS = 10V ID Max TA = +25°C 300mA .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it id.

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Datasheet Specifications

Part number: 2N7002E
Manufacturer: DIODES ↗ Incorporated
File Size: 261.15 KB
Datasheet: 2N7002E_DiodesIncorporated.pdf
Description: N-channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface-Mount Package
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Motor controls
* Power-management functions Mechanical Data
* Package: SOT23

2N7002E Distributors

📁 Related Datasheet

2N7002E-T1-GE3 2N7002 2N7002-G 2N7002-HF 2N7002A 2N7002AQ

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2N7002E N-channel MOSFET Diodes Incorporated

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