2N7002E-T1-GE3 Datasheet - VBsemi

2N7002E-T1-GE3 N-Channel 60V MOSFET

2N7002E-T1-GE3 Features

* Halogen-free According to IEC 61249-2-21 Definition

* Low Threshold: 2 V (typ.)

* Low Input Capacitance: 25 pF

* Fast Switching Speed: 25 ns

* Low Input and Output Leakage

* TrenchFET® Power MOSFET

* Compliant to RoHS Directive 2002/95/EC BEN

Datasheet Details

2N7002E-T1-GE3

VBsemi

252.23 KB

N-channel 60v mosfet.

📁 Related Datasheet

2N7002E N-channel MOSFET (Vishay)

2N7002E Small Signal MOSFET (ON Semiconductor)

2N7002E MOSFET (TAITRON)

2N7002E N-Channel MOSFET (LITE-ON)

2N7002E N-channel MOSFET (Diodes Incorporated)

2N7002E N-channel TrenchMOS FET (NXP)

2N7002 N-channel FET (Fairchild Semiconductor)

2N7002 N-Channel Power Mosfet (GME)

TAGS

2N7002E-T1-GE3 N-Channel 60V MOSFET VBsemi

2N7002E-T1-GE3 Distributor