2N7002E-T1-GE3 Datasheet, Mosfet, VBsemi

2N7002E-T1-GE3 Features

• Mosfet
• Halogen-free According to IEC 61249-2-21 Definition
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns

PDF File Details

Part number:

2N7002E-T1-GE3

Manufacturer:

VBsemi

File Size:

252.23kb

Download:

📄 Datasheet

Description:

N-channel 60v mosfet.

2N7002E-T1-GE3 Application

• Applications
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors,

TAGS

2N7002E-T1-GE3

VBsemi

📁 Related Datasheet

2N7002E - N-channel MOSFET (Vishay)
N-Channel 60 V (D-S) MOSFET 2N7002E Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 3 at VGS = 10 V ID (mA) 240 FEATURES • Halogen-free.

2N7002E - Small Signal MOSFET (ON Semiconductor)
Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 2N7002E Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technolog.

2N7002E - MOSFET (TAITRON)
Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) Features • High density cell design for low RDS(ON). • Voltage contro.

2N7002E - N-Channel MOSFET (LITE-ON)
N-Channel 60V MOSFET Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2.

2N7002E - N-channel MOSFET (Diodes Incorporated)
2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3Ω @ VGS = 10V ID Max TA = +25°C 300mA Features and Benefits • Lo.

2N7002E - N-channel TrenchMOS FET (NXP)
2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Fiel.

2N7002 - N-channel FET (Fairchild Semiconductor)
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi.

2N7002 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-.

2N7002 - 300mA N-channel MOSFET (nexperia)
2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhan.

2N7002 - N-Channel MOSFET (MCC)
Features • Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Se.