2N7002E-T1-GE3 Datasheet - VBsemi

2N7002E-T1-GE3, N-Channel 60V MOSFET

2N7002E-T1-GE3-VB 2N7002E-T1-GE3-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 .

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Datasheet Details

Part number:

2N7002E-T1-GE3

Manufacturer:

VBsemi

File Size:

252.23 KB

Description:

N-Channel 60V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Low Threshold: 2 V (typ. )
* Low Input Capacitance: 25 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* Compliant to RoHS Directive 2002/95/EC BEN

Applications

* Direct Logic-Level Interface: TTL/CMOS
* Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
* Battery Operated Systems
* Solid-State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Vo

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2N7002E-T1-GE3 N-Channel 60V MOSFET VBsemi

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