2N7002B - N-channel MOSFET

Datasheet Summary

Features

ESD rating: 2000V (HBM).
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V.
High power and current handling capability.
Very fast switching.
RoHS compliant device.

KODENSHI KOREA

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Datasheet Details

Part number	2N7002B
Manufacturer	KODENSHI KOREA
File Size	238.63 KB
Description	N-channel MOSFET
Datasheet	2N7002B Datasheet
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2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V  High power and current handling capability  Very fast switching  RoHS compliant device Applications  High speed line driver SOT-23 Ordering Information Part Number Marking Code Package Packaging 2N7002B 7B2 □ SOT-23 Tape & Reel Marking Information 7B2 □ 7B2 = Specific Device Code □ = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified) Characteristic Symbol Drain-Source voltage Gate-Source voltage Maximum drain current (Note 1) Pulsed drain current (Note 1) Power dissipation (Note 2) Operating junction temperature Storage temperature range Thermal resistance junction to ambient

Published: Jan 23, 2017 |