2N7002BKV Datasheet - nexperia

2N7002BKV, dual N-channel MOSFET

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev.2 * 22 September 2010 Product data sheet 1.Product profile 1.1 General descript.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFE.

Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-

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