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2N7002H - 60V N-Channel MOSFET

2N7002H Description

2N7002H 60 V, N-channel Trench MOSFET 1 December 2021 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002H Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology

2N7002H Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage

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