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2N7002BKW N-channel MOSFET

2N7002BKW Description

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET 17 October 2024 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package using Trench MOSFET tec.

2N7002BKW Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

2N7002BKW Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage ID drain current VGS = 10 V;

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N-channel MOSFET nexperia
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