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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤1.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra lo |
 INCHANGE |
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CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on), |
 Infineon Technologies |
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CoolMOS Power Transistor G G : CI G : E: I I K : 0 / ,#%-# * , 0 # " 1 91 (U0 G J : 9C: H H $ 6I : H DJ G 8 : K DA I 6: ( =%af]dV ' 9L ' 9K ( 9K 91 (U0 - @L - =L 3 deReZT - DL: G9 H H E6I DC , E: G 6I C 6C9 H I DG 6: I : B E: G 6I J G : * DJ |
Infineon Technologies |
