OptiMOS® Power-Transistor Features • N-channel .
Infineon Technologies
IPB80N06S2L-H5 - Power-Transistor
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
Infineon Technologies
IPB80N06S2L-09 - Power-Transistor
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
Infineon Technologies
IPB80N06S2L-07 - Power-Transistor
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
Infineon Technologies
IPB80N06S2L-06 - Power-Transistor
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o.
Infineon Technologies
IPB80N06S2L-11 - Power-Transistor
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175.
Infineon Technologies
IPB80N06S2L-05 - Power-Transistor
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qua.
VBsemi
IPB80N06S2L-H5 - N-Channel MOSFET
IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60.
