IPD033N06N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch

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IPD033N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi

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