IPD036N04L Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.6mΩ ·Enhancement mode: ·100% avalanch

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Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1

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Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1

(24 views)