IPD053N08N3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanc

(27 views)

IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

(23 views)

IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

(17 views)