IPD180N10N3 Datasheet | Specifications & PDF Download

IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanch

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