isc N-Channel MOSFET Transistor IPD180N10N3,IIPD18.
Infineon
IPD180N10N3G - Power-Transistor
IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Infineon
IPD180N10N3 - Power-Transistor
IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IPD180N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD180N10N3,IIPD180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanch.