Infineon
IPD90N04S4-03 - Power-Transistor
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr
Rating:
1
★
(3 votes)
Infineon
IPD90N04S4-02 - Power-Transistor
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr
Rating:
1
★
(3 votes)
Infineon
IPD90N04S4-05 - Power-Transistor
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr
Rating:
1
★
(2 votes)
Infineon Technologies
IPD90N04S4-04 - Power-Transistor
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr
Rating:
1
★
(2 votes)
Infineon
IPD90N04S4L-04 - Power-Transistor
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr
Rating:
1
★
(1 votes)