IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS.
Infineon Technologies
IPI111N15N3G - Power Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features •.
Infineon
IPI111N15N3 - Power-Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
INCHANGE
IPI111N15N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche.