IPP029N06N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP029N06N，IIPP029N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhancem

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPP029N06N Data Sheet Rev. 2.6 Final Power Managem

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