IPP041N12N3 G OptiMOSTM3 Power-Transistor Feature.
Infineon Technologies AG
IPP041N12N3G - Power-Transistor
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
