IPP060N06N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancem

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

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