IPP60R520E6 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPP60R520E6，IIPP60R520E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.52Ω ·Enhancement mode ·Fast Switch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.2 Final Powe

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