F214 (Rev 05FEB14) TM STRIP 40 CC10R–1012–L.
IP Semiconductor
IPS604-08D - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-06I - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-05I - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
Samtec
IPS6-06-01-L - DISCRETE WIRE COMPONENTS & TOOLING
F214 (Rev 05FEB14) TM STRIP 40 CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT (6,35 mm) .250 IPS6, CC10, PET SERIES DISCRETE WIRE COMPONENTS & TOOLIN.
Samtec
IPS6-04-01-L - DISCRETE WIRE COMPONENTS & TOOLING
F214 (Rev 05FEB14) TM STRIP 40 CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT (6,35 mm) .250 IPS6, CC10, PET SERIES DISCRETE WIRE COMPONENTS & TOOLIN.
Samtec
IPS6-02-01-L - DISCRETE WIRE COMPONENTS & TOOLING
F214 (Rev 05FEB14) TM STRIP 40 CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT (6,35 mm) .250 IPS6, CC10, PET SERIES DISCRETE WIRE COMPONENTS & TOOLIN.
Infineon
IPS65R650CE - MOSFET
IPS65R650CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IP Semiconductor
IPS604-08I - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-06D - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-05D - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-03I - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
IP Semiconductor
IPS604-03D - High sensitive triggering levels
IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate curren.
International Rectifier
IPS6041GPBF - INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet No. PD60282 IPS6041(G)(R)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features • • • • • • • • • Over temperature shutdown (with auto-restart.
International Rectifier
AUIPS6031R - INTELLIGENT POWER HIGH SIDE SWITCH
September, 12th 2011 Automotive grade AUIPS6031(S)(R) Done please find INTELLIGENT POWER HIGH SIDE SWITCH Features Over tempera.
International Rectifier
AUIPS6031S - INTELLIGENT POWER HIGH SIDE SWITCH
September, 12th 2011 Automotive grade AUIPS6031(S)(R) Done please find INTELLIGENT POWER HIGH SIDE SWITCH Features Over tempera.
Infineon
IPS60R650CE - MOSFET
IPS60R650CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
Infineon
IPS60R1K5CE - MOSFET
IPS60R1K5CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
International Rectifier
IPS6011SPBF - INTELLIGENT POWER HIGH SIDE SWITCH
www.DataSheet4U.com Data sheet No. PD60279 IPS6011(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features • • • • • • • • • Over temperature shutdown .
International Rectifier
IPS6011RPBF - INTELLIGENT POWER HIGH SIDE SWITCH
www.DataSheet4U.com Data sheet No. PD60279 IPS6011(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features • • • • • • • • • Over temperature shutdown .
Infineon
IPS65R400CE - MOSFET
IPD65R400CE, IPS65R400CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
