IPU80R1K4CE Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.3 Final Power Man

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