IPW60R041P6 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R041P6 IIPW60R041P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancem

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPW60R041P6 Data Sheet Rev. 2.0 Final Power Man

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