IRF1310N Datasheet | Specifications & PDF Download

PD - 91504A IRF1310N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Full

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isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.036Ω ·Enhancement mode ·Fast Switching S

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• Lead-Free PD - 95690 IRF1310NPbF www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1

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PD - 91514B IRF1310NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL)

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PD- 95322 IRF1310NS/LPbF • Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 ww

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PD- 95322 IRF1310NS/LPbF • Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 ww

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PD - 91514B IRF1310NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL)

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Isc N-Channel MOSFET Transistor IRF1310NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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