IRF250 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF250 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Vol

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IRF250 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET V

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IRF250P225 MOSFET StrongIRFET™ Applications  UPS and Inverter applications  Half-bridge and full-bridge topologies  Resonant mode power supplies

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isc N-Channel MOSFET Transistor IRF250P224，IIRF250P224 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche

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IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 )

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IRF250P224 MOSFET StrongIRFET™   Applications  UPS and Inverter applications  Half-bridge and full-bridge topologies  Resonant mode power suppli

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PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543

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IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement

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