isc N-Channel MOSFET Transistor IRF2807Z, IIRF280.
International Rectifier
7
IRF2807ZS - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
International Rectifier
6
IRF2807Z - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
International Rectifier
5
IRF2807ZLPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
International Rectifier
5
IRF2807ZSPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
International Rectifier
4
IRF2807ZPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
INCHANGE
4
IRF2807ZS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.
INCHANGE
4
IRF2807Z - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S.
International Rectifier
4
IRF2807ZL - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
INCHANGE
4
IRF2807ZL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.