IRF3415 Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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PD - 91477D IRF3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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AUTOMOTIVE GRADE PD - 97625 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Sw

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• Lead-Free PD - 95112 IRF3415S/LPbF www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com

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• Lead-Free PD - 95112 IRF3415S/LPbF www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com

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PD - 91509C IRF3415S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175

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isc N-Channel MOSFET Transistor IRF3415，IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed

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Isc N-Channel MOSFET Transistor IRF3415S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

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PD - 91509C IRF3415S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175

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