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AUIRF3415 - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • G AUIRF3415 HEXFET® Power MOSFET D V(BR)DSS 150V RDS(on) max. 0.042Ω S ID 43A D.

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AUTOMOTIVE GRADE PD - 97625 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* G AUIRF3415 HEXFET® Power MOSFET D V(BR)DSS 150V RDS(on) max. 0.042Ω S ID 43A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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