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AUIRF3004WL - Power MOSFET

Description

Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • AUIRF3004WL HEXFET® Power MOSFET D V(BR)DSS 40V RDS(on) typ. 1.27mΩ max. 1.40mΩ G ID (Silicon Limited) 386A c S ID (Package Limited) 240A.

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AUTOMOTIVE GRADE PD - 97677 Features l Advanced Process Technology l Ultra Low On-Resistance l 50% Lower Lead Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * AUIRF3004WL HEXFET® Power MOSFET D V(BR)DSS 40V RDS(on) typ. 1.27mΩ max. 1.40mΩ G ID (Silicon Limited) 386A c S ID (Package Limited) 240A Description Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die.
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