IRF4905L Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advanced trench process technology

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  150°C Operating Temperature  Fast Switching  Repe

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O O O O O O HEXFET® Power MOSFET D O Advanced Process Technology Ultra Low On-Resistance 150°C Operati

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PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O

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AUTOMOTIVE GRADE Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance 150°C Operating Temperature Fast Switching R

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