PD - 91386C IRF5305S/L HEXFET® Power MOSFET Adva.
INCHANGE
IRF5305S - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .
International Rectifier
IRF5305S - Power MOSFET
PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
International Rectifier
IRF5305SPBF - HEXFET Power MOSFET
PD - 95957 IRF5305S/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5.
