l Advanced Process Technology l Ultra Low On-Resis.
International Rectifier
IRF530NPbF - HEXFET Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
VBsemi
IRF530NPBF - N-Channel MOSFET
IRF530NPBF IRF530NPBF Datasheet www.VBsemi.com N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V I.
