IRF540N Datasheet | Specifications & PDF Download

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching G Fully Avalanche Rated Lea

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Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(

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Data Sheet January 2002 IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE)

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free De

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switch

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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