Data Sheet January 2002 IRF540N 33A, 100V, 0.04.
IRF540N - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.IRF540N - Power MOSFET
Data Sheet January 2002 IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE).F540NS - IRF540NS
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRF540N - Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching G Fully Avalanche Rated Lea.IRF540NS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.IRF540NL - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRF540NPbF - Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free De.IRF540NS - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .IRF540NS - N-Channel MOSFET
SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) ● Fast Switch.IRF540NLPbF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.IRF540NSPbF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.IRF540NPBF - N-Channel MOSFET
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(.IRF540NL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.