$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugge.
Samsung
IRF634A - Advanced Power MOSFET
)($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,P.
Fairchild Semiconductor
IRF634A - Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
ART CHIP
IRF634A - Advanced Power MOSFET
FEATURES z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current.
