GE IRF642 - FIELD EFFECT POWER TRANSISTOR ~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D. This series of N-Channel Enhancement-mode Power MOSFET Rating: 1 ★ (3 votes)
Inchange Semiconductor IRF642 - N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low D Rating: 1 ★ (1 votes)