IRF7324 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Techno

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VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.018 42 -9.0 V Ω nC A IRF7324TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8

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www.DataSheet4U.com PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1

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PD -93799A IRF7324 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available i

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PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal for Mobile Phone Applications l

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