IRF7324 Datasheet - International Rectifier

IRF7324, Power MOSFET

PD -93799A IRF7324 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available i.
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

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IRF7324_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7324

Manufacturer:

International Rectifier

File Size:

120.30 KB

Description:

Power MOSFET

Features

* 37994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/00 8 www. irf. com www. DataSheet. in

Applications

* T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation
* Maximum Power

IRF7324 Distributors

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IRF7324 Power MOSFET International Rectifier

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