IRF730B

400V N-Channel MOSFET

Fairchild Semiconductor

IRF730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRF730B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRF730B Datasheet (898.57 KB)

IRF730B Datasheet Preview — Preview of IRF730B PDF

Datasheet Details

Part number:

IRF730B

Manufacturer:

Fairchild Semiconductor

File Size:

898.57 KB

Description:

400v n-channel mosfet.

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IRF730B 400V N-Channel MOSFET Fairchild Semiconductor

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IRF730B Features

IRF730B General Description

Datasheet Details

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Description:

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