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IRF730B - 400V N-Channel MOSFET

IRF730B Description

IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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Datasheet Details

Part number
IRF730B
Manufacturer
Fairchild Semiconductor
File Size
898.57 KB
Datasheet
IRF730B_FairchildSemiconductor.pdf
Description
400V N-Channel MOSFET

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400V N-Channel MOSFET Fairchild Semiconductor
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