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IRF7301PBF - HEXFET Power MOSFET

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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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PD - 95176 HEXFET® Power MOSFET l l l l l l l l IRF7301PbF S1 G1 S2 G2 1 2 3 4 8 7 Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free D1 D1 D2 D2 VDSS = 20V RDS(on) = 0.050Ω 6 5 Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
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