IRF710B Datasheet - Fairchild Semiconductor

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IRF710B 400V N-Channel MOSFET

IRF710B/IRFS710B November 2001 IRF710B/IRFS710B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF710B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRF710B

Manufacturer:

Fairchild Semiconductor

File Size:

859.16 KB

Description:

400V N-Channel MOSFET

Features

* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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IRF710B 400V N-Channel MOSFET Fairchild Semiconductor

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